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FEOL Expert/Senior Member of Technical Staff in Multinational microelectronic industry Co
[Company Status]
ȸ»ç´Â µ¶ÀÏ¿¡ º»»ç°¡ ÀÖ°í AP´Â ¸»·¹ÀÌÁö¾Æ ÀÖ´Â ÀüÀÚ ¹× ¹ÝµµÃ¼ ºÐ¾ß ´Ù±¹Àû ±â¾÷À¸·Î FEOL Process Development ExpertÀü¹®°¡¸¦ ¸ð½Ê´Ï´Ù.

[Job Title]
FEOL Expert/Senior Member of Technical Staff

a. Position based in Kuching, Malaysia
b. Reporting to Global Process Development Team Leader
c. Attached to Technology Department
d. Minimum 15-20 years of RELEVANT FEOL integration experience
e. Hands-on experience of all FEOL process blocks, such as Shallow Trench Isolation (STI), gate stack, spacer and silicide and understanding of all related processing steps (lithography, etch, implantation, diffusion, wet cleaning, RTA, defect management).
f. Extensive device physics knowledge.
g. A solid track record of optimising FEOL processes for yield and reliability.
h. Good understanding of reliability failure mechanisms for dielectrics (TDDB) and devices (HCI, NBTI) and Failure Analysis techniques.
i. Target Asian candidates, e.g. Koreans, Taiwanese, Chinese, Singaporean
j. Able to communicate in English fluently
k. Willing to travel
l. Budget: not a concern as long as the candidate fits the requirement

[Job Summary]
MNC is looking for a Front-End-Of-Line (FEOL) expert to join our Process Development team, based in Kuching, Malaysia, but working as part of an international organisation developing mixed signal CMOS and integrated MEMS technologies. Our FEOL technologies must support a distinctive range of modular options to integrate high voltage capability, non-volatile memory and sensors; the ideal candidate should have experience over these diverse application areas.

[Major Responsibilities]
• Lead FEOL process integration activities for specialised next generation mixed signal CMOS.
• Optimise FEOL processes for yield and reliability.
• Support the transfer of technologies to other X-FAB sites.
• Liaise with customers to support production ramp.
• Provide technical leadership to define the strategy for future FEOL technologies, based on an understanding of customer future needs.

[Requirements]
1. Qualification: Bachelor Degree / Master of Engineering in Material Science, Physics, Microelectronics or related subject. PhD desirable
2. Experience: Minimum 15-20 years of experience in FEOL integration.

[Skills/Competencies]

Behavioral Competencies :
1. Willingness to travel and ability to work effectively in international team
2. Self motivated
3. Good technical leadership and organizing abilities
4. Able to meet deadlines
5. Good problem-solving skills
6. Quality awareness
7. Excellent English language and communication skills

Technical/ Functional Competencies:
1. Hands-on experience of all FEOL process blocks, such as Shallow Trench Isolation (STI), gate stack, spacer and silicide and understanding of all related processing steps (lithography, etch, implantation, diffusion, wet cleaning, RTA, defect management).
2. Experience of SOI and BCDMOS technologies is an advantage.
3. Extensive device physics knowledge.
4. A solid track record of optimising FEOL processes for yield and reliability.
5. Good understanding of reliability failure mechanisms for dielectrics (TDDB) and devices (HCI, NBTI) and Failure Analysis techniques.
6. Understanding of design rules and the impact of device characteristics on product performance.
7. Trained in the formal use of Design-of-Experiments and statistical techniques.
8. Familiarity with TCAD and test structure design are advantages.

[Location]
Malaysia or Germany

[Number of Persons] 1

[Salary Expectation]
Negotiable

[Foreign Languages] English

[Apply a Position]
Please send your English resume(Documents/ CVs must be written in English)A.S.A.P (MS word only)by E-mail top@topheadhunter.co.kr
* The title of E-mail should be FEOL Process Development Expert in Multinational microelectronic industry Company.

* All submitted documents will be treated with highly confidential manner.
Thank you for your interest.

[Contact]
Tel No 82-2-555-7234
E-mail top@topheadhunter.co.kr

* ¿Ü±¹±Ù¹«½Ã ±¹³» ¿¬ºÀ¿¬ºÀº¸´Ù»ó½Â, ÁÖ°Å(Áý), Â÷·®(Â÷·®À¯Áöºñ), Àڳ౳À°ºñ(±¹Á¦Çб³) µîÀÌ Áö¿øµÇ´Â°ÍÀÌ ±âº» ÀÔ´Ï´Ù.
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